DDR_D8 return current · latest PCB

Memory escape · 400 MHz · top/bottom signals · inner1/inner2 GND planes

Memory-side escape

The input fixture joins the actual memory signal pad to its nearest exported package GND pad. It is a test fixture; package internals and the real driver are omitted. The cut bottom trace is terminated through a 50 Ω fixture to inner2 GND.

New-board solves completed; accuracy is provisional. Only selected connection/region combinations have solved fields; other connections are PCB inspection only. These local crops truncate plane coupling and exclude GND connections outside the crop. Element-order checking does not establish local-density, crop or fixture convergence. No validated “bad loop” verdict is available.
0.010.1110100 A/m
● Cyan: signal on top● Orange: signal on bottomTwo-color ring: signal transition viaMagenta: GND pads / vias and selected source returnGND via current: hover over a via for mA

Choose from 47 DDR connections. DDR_D8 and DDR_D13 have U1 processor EM overlays. DDR_D8 also has downstream and memory-side runs; other connections are PCB inspection only. Use PCB visibility and heat opacity to compare copper and return current.

Drag to pan; scroll to zoom. Labels stay the same size. Colors show surface-current phasor magnitude |K|. White arrows show instantaneous direction at phase 0°, which changes through the RF cycle.

Locate this trace and both experiments on the PCB

Cyan: full selected DDR_D8 route. Amber: the two local EM domains.

Latest PCB with DDR_D8 highlighted and EM regions marked

All four layer images

Simulation parameters and checks

First → second element order on the same mesh: input-current magnitude changed 14.7%; reactance changed 13.0%. This does not validate local-density peaks, crop extent or test fixtures. These are provisional normalized EM results.

SolverPalace v0.14.0 · 3D frequency-domain FEM Maxwell · order 2
Excitation400 MHz · 1 V signal-to-GND normalized peak phasor · 50 Ω input reference and load
Stackup assumptionTop 1.6 / inner1 1.4 / inner2 0.2 / bottom 0 mm from bottom. Internal dielectric thicknesses are not supplied by the PCB export.
MaterialsFR4 εr 4.3, tanδ 0.02 · copper 5.8×10⁷ S/m · copper foil 35 µm · via plating 25 µm
Mesh18,288 nodes · 57,797 tetrahedra · 0.1 mm minimum target · octagonal barrels
Domainx [-1.5, 4.5], y [-25.5, -21.5] mm · 5 mm air padding · first-order absorbing boundary
Geometry1 selected signal via; 5 GND vias. Exported GND vias span top→inner1; signal vias span top↔bottom. The model follows those spans. Any inner1↔inner2 GND stitching through fabrication barrels, plated holes or copper outside these crops is omitted. This can strongly affect impedance; fabrication spans/stubs require confirmation. Other signal/power copper, package internals and decoupling are omitted.
Displayed ground facesInner1 upper face (toward top signal); inner2 lower face (toward bottom signal); outer GND faces. These are face currents, not sums across the two faces of a plane.
Results, source snapshot and reproduction files

SI phasor report · Solver configuration · Element-order comparison · Via currents · Source repository

PCB SHA-256: 80ef96cf94a1dac4f3d062f694fe71529a9a57f5a1dd6e8b1abdf92302968b13